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DISCRETE SEMICONDUCTORS
DATA SHEET
BLF522 UHF power MOS transistor
Product specification September 1992
Philips Semiconductors
Product specification
UHF power MOS transistor
FEATURES * High power gain * Easy power control * Gold metallization * Good thermal stability * Withstands full load mismatch * Designed for broadband operation. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 6-lead, SOT171 flange envelope, with a ceramic cap. All leads are isolated from the flange. PINNING - SOT171 PIN 1 2 3 4 5 6 DESCRIPTION source source gate drain source source WARNING Product and environmental safety - toxic materials
1 3 5 2 4 6 g
MBB072
BLF522
PIN CONFIGURATION
halfpage
d
s
Top view
MBA931 - 1
Fig.1 Simplified outline and symbol.
CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling.
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
QUICK REFERENCE DATA RF performance at Th = 25 C in a common source class-B circuit. MODE OF OPERATION CW, class-B f (MHz) 500 VDS (V) 12.5 PL (W) 5 GP (dB) > 10 D (%) > 50
September 1992
2
Philips Semiconductors
Product specification
UHF power MOS transistor
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VDS VGS ID Ptot Tstg Ti PARAMETER drain-source voltage gate-source voltage DC drain current total power dissipation storage temperature junction temperature up to Tmb = 25 C CONDITIONS - - - - -65 - MIN.
BLF522
MAX. 40 20 1.8 20 150 200
UNIT V V A W C C
THERMAL RESISTANCE SYMBOL Rth j-mb Rth mb-h PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink CONDITIONS Tmb = 25 C; Ptot = 20 W Tmb = 25 C; Ptot = 20 W THERMAL RESISTANCE 8.8 K/W 0.4 K/W
handbook, halfpage
5
MRA990
handbook, halfpage P
35 30 25
MRA427
ID (A)
tot (W)
(1)
(2)
(2)
1
20
(1)
15 10 5 0.1 0 0
1
10
VDS (V)
100
20
40
60
80
100 120 Th (oC)
(1) Current in this area may be limited by RDS(on). (2) Tmb = 25 C.
(1) Continuous operation. (2) Short-time operation during mismatch.
Fig.2 DC SOAR.
Fig.3 Power/temperature derating curves.
September 1992
3
Philips Semiconductors
Product specification
UHF power MOS transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)DSS IDSS IGSS VGS(th) gfs RDS(on) IDSX Cis Cos Crs PARAMETER drain-source breakdown voltage drain-source leakage current gate-source leakage current gate-source threshold voltage forward transconductance drain-source on-state resistance on-state drain current input capacitance output capacitance feedback capacitance CONDITIONS VGS = 0; ID = 5 mA VGS = 0; VDS = 12.5 V VGS = 20 V; VDS = 0 ID = 50 mA; VDS = 10 V ID = 0.7 A; VDS = 10 V ID = 0.7 A; VGS = 15 V VGS = 15 V; VDS = 10 V VGS = 0; VDS = 12.5 V; f = 1 MHz VGS = 0; VDS = 12.5 V; f = 1 MHz VGS = 0; VDS = 12.5 V; f = 1 MHz MIN. 40 - - 2 200 - - - - -
BLF522
TYP. MAX. UNIT - - - - 270 1.8 2.3 14 17 3 - 0.5 1 4.5 - 2.7 - - - - V mA A V mS A pF pF pF
handbook, halfpage
25
MRA254
handbook, halfpage
3
MRA249
T.C. (mV/K)
ID (A) 2
15
5
1
-5 10
0 102 103 ID(mA) 104
0
4
8
12
16 20 VGS (V)
VDS = 10 V.
VDS = 10 V; Tj = 25 C.
Fig.4
Temperature coefficient of gate-source voltage as a function of drain current, typical values.
Fig.5
Drain current as a function of gate-source voltage, typical values.
September 1992
4
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF522
handbook, halfpage
5
MRA253
MRA246
RDSon () 4
handbook, halfpage
50
C (pF) 40
3
30
2
20
Cos
1
10
Cis
0
0
50
100
Tj (oC)
150
0
0
4
8
12 VDS (V)
16
ID = 0.7 A; VGS = 15 V;
VGS = 0; f = 1 MHz.
Fig.6
Drain-source on-state resistance as a function of junction temperature, typical values.
Fig.7
Input and output capacitance as functions of drain-source voltage, typical values.
handbook, halfpage
10
MRA256
Crs (pF)
8
6
4
2
0 0 4 8 12 VDS (V) 16
VGS = 0; f = 1 MHz.
Fig.8
Feedback capacitance as a function of drain-source voltage, typical values.
September 1992
5
Philips Semiconductors
Product specification
UHF power MOS transistor
APPLICATION INFORMATION FOR CLASS-B OPERATION Th = 25 C; Rth mb-h = 0.4 K/W, unless otherwise specified. RF performance in a common source class-B circuit. MODE OF OPERATION CW, class-B f (MHz) 500 VDS (V) 12.5 IDQ (mA) 50 PL (W) 5 Gp (dB) > 10 typ. 11
BLF522
D (%) > 50 typ. 55
Ruggedness in class-B operation The BLF522 is capable of withstanding a full load mismatch corresponding to VSWR = 50:1 through all phases under the following conditions: VDS = 15.5 V; f = 500 MHz at rated output power.
handbook, halfpage
20 GP (dB) 16
MRA247
100
(%) 80
handbook, halfpage
10
MRA252
PL (W) 8
12
GP
60
6
8
40
4
4
20
2
0
3
4
5
6
PL (W)
7
0
0
0
0.4
0.8
1.2
PIN (W)
1.6
Class-B operation; VDS = 12.5 V; IDQ = 50 mA; f = 500 MHz.
Class-B operation; VDS = 12.5 V; IDQ = 50 mA; f = 500 MHz.
Fig.9
Power gain and efficiency as functions of load power, typical values.
Fig.10 Load power as a function of input power, typical values.
September 1992
6
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF522
handbook, full pagewidth
C15 L5 C2 50 input C1 L1 C4 L2 C6 L3 L4 L6 C3 C5 C7 R1 C10 C8 R2 C9 C11 +VDS R3 f = 500 MHz. R4 C13 C14 C12 C16 DUT L8 L9
C17 L10 C20 50 output
C18
C19
R5
L7
MGA070
Fig.11 Test circuit for class-B operation.
September 1992
7
Philips Semiconductors
Product specification
UHF power MOS transistor
List of components (class-B test circuit) COMPONENT C1, C8, C20 C2 C3, C5, C18, C19 C4 C6, C7, C15, C16, C17 C12 C14 L1 L2 L3 L4, L5 L6 DESCRIPTION multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor (note 2) film dielectric trimmer multilayer ceramic chip capacitor (note 2) multilayer ceramic chip capacitor (note 2) multilayer ceramic chip capacitor (note 1) electrolytic capacitor stripline (note 3) stripline (note 3) stripline (note 3) stripline (note 3) 4 turns enamelled 0.8 mm copper wire grade 3B Ferroxcube RF choke stripline (note 3) stripline (note 3) stripline (note 3) 0.4 W metal film resistor 0.4 W metal film resistor 10 turns cermet potentiometer 0.4 W metal film resistor 1 W metal film resistor 50 50 50 10 k 1 k 50 k 47 k 10 10 x 2.5 mm 16.5 x 2.5 mm 34.5 x 2.5 mm VALUE 430 pF, 50 V 3.9 pF, 50 V 2 to 18 pF 20 pF, 50 V 10 pF, 50 V 100 nF, 50 V 390 pF, 50 V 10 F, 63 V 50 50 50 42 24.9 nH 36.6 x 2.5 mm 16.7 x 2.5 mm 7.7 x 2.5 mm 3 x 3 mm length 6.9 mm int. dia. 2.5 mm leads 2 x 5 mm DIMENSIONS
BLF522
CATALOGUE NO.
2222 809 09003
C9, C10, C11, C13 multilayer ceramic chip capacitor
2222 852 47104
2222 030 38109
L7 L8 L9 L10 R1 R2 R3 R4 R5 Notes
4312 020 36642
2322 151 51003 2322 151 51002 2322 151 54703 2322 153 51009
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality. 3. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (r = 2.2); thickness 0.79 mm.
September 1992
8
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF522
andbook, full pagewidth
R3 C11 C9 R2 C8 C10 R1 C6 L2 L3 L4 C7 C12 L6 L5 L8 C15 C16 C14 R5 L7
+VDS
C13 C20 L9 L10
C4 C1 C2 L1
C3
C5
C18
C19
MBC218
handbook, full pagewidth
150 mm
strap strap
strap strap
70 mm strap
rivets (12x) strap strap
strap
MBC217
The circuit and components are situated on one side of the printed circuit board, the other side being fully metallized, to serve as a ground plane. Earth connections are made by means of copper straps and hollow rivets for a direct contact between upper and lower sheets.
Fig.12 Component layout for 500 MHz class-B test circuit.
September 1992
9
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF522
handbook, halfpage
10
MRA250
Zi 0 ()
ri
handbook, halfpage
20
MRA251
ZL () 15
-20
xi RL 10
-40
-60
5
XL
-80 100 200 300 400 f (MHz) 500 0 100 200 300 400 f (MHz) 500
Class-B operation; VDS = 12.5 V; IDQ = 50 mA; PL = 5 W.
Class-B operation; VDS = 12.5 V; IDQ = 50 mA; PL = 5 W.
Fig.13 Input impedance as a function of frequency (series components), typical values.
Fig.14 Load impedance as a function of frequency (series components), typical values.
handbook, halfpage
30 GP (dB) 25
MRA248
20
handbook, halfpage
15
10 Zi ZL
MBA379
5
0 100
200
300
400
f (MHz)
500
Class-B operation; VDS = 12.5 V; IDQ = 50 mA; PL = 5 W.
Fig.15 Definition of MOS impedance.
Fig.16 Power gain as a function of frequency, typical values.
September 1992
10
Philips Semiconductors
Product specification
UHF power MOS transistor
PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 6 leads
BLF522
SOT171A
D
A F D1
U1 q H1 b1 C w2 M C
B
c
2
4
6
H
U2
E1
E
A
1
3
5
b e
p w3 M
w1 M A B Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 6.81 6.07 b 2.15 1.85 b1 3.20 2.89 c 0.16 0.07 D 9.25 9.04 D1 9.30 8.99 E 5.95 5.74 E1 6.00 5.70 e 3.58 F H H1 p 3.43 3.17 Q q U1 U2 w1 0.51 w2 1.02 0.04 w3 0.26 0.01
3.05 11.31 9.27 2.54 10.54 9.01
4.32 24.90 6.00 18.42 4.11 24.63 5.70
0.268 0.085 0.126 0.006 0.364 0.366 0.234 0.236 0.120 0.445 0.365 0.135 0.170 0.980 0.236 0.725 0.02 0.140 0.239 0.073 0.114 0.003 0.356 0.354 0.226 0.224 0.100 0.415 0.355 0.125 0.162 0.970 0.224
OUTLINE VERSION SOT171A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-06-28
September 1992
11
Philips Semiconductors
Product specification
UHF power MOS transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLF522
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
September 1992
12

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